Post by account_disabled on Jan 29, 2024 9:16:54 GMT
Micron Introduces HBM3 Gen2 Memory: 1.2 TB/s Memory Stacks for HPC and AI Processors July 26, 2023by Youth23 Micron today introduced its first HBM3 memory products, the latest from major memory manufacturers to begin building high-bandwidth memory widely used in server-grade GPUs and other high-end processors. In an effort to make up for lost time to its Korean rivals, Micron plans to essentially skip the "vanilla" HBM3 and go straight to even higher-bandwidth versions of the memory, which they're calling "HBM3 Gen2," with 24GB stacks develop that work too much. 9 GigaTransfers per second. These new HBM3 memory stacks from Micron will be primarily aimed at data center AI and HPC, and mass production for Micron will begin in early 2024. Micron's 24 GB HBM3 Gen2 modules are based on stacking eight 24 Gbit memories, built using the company's 1β (1-beta) manufacturing process. It is worth noting.
that Micron is the first memory vendor to announce plans to build HBM3 memory with these high-density dies, while SK hynix offers its 24 GB stacks , the company's 12-Hi configuration of 16 Gbit- uses So Micron is on track to be the first vendor to offer 24GB HBM3 modules in the more popular 8-Hi configuration. And Micron doesn't plan to stop at 8-Hi 24Gbit HBM3 Gen2 modules, and the company says they plan Country Email List introduce 36GB 12-Hi HBM3 Gen2 stacks next year. Besides taking the lead in density, Micron also wants to lead in speed. The company expects the HBM3 Gen2 parts to reach speeds of up to 9.2 GT/s, 44% above the top speed of the HBM3 core specification and 15% faster than the 8 GT/s target for rival SK hynix HBM3E Memory .
The increased data transfer rateallows each 24 GB memory module to offer a peak bandwidth of 1.2 TB/s per stack. Micron says the 24GB HBM3 Gen2 stacks enable 4096-bit HBM3 memory subsystems with 4.8 TB/s bandwidth and 6096-bit HBM3 memory subsystems with 7.2 TB/s bandwidth. To put the numbers into context, the Nvidia H100 SXM has a peak memory bandwidth of 3.35 TB/s. Micron's goal of moving to an immediate leadership position in the HBM3 market means that they need to step up their competition from a technical level. Among other changes and innovations to make it happen, the company has doubled the number of silicon wafers (TSV) compared to the HBM3 product delivery. In addition, Micron has reduced the distance between DRAM devices in HBM3 Gen2 stacks. These two changes in packaging reduced the thermal resistance of these memory modules and made them easier to cool. However, the increased number of TSVs may also bring other advantages.
that Micron is the first memory vendor to announce plans to build HBM3 memory with these high-density dies, while SK hynix offers its 24 GB stacks , the company's 12-Hi configuration of 16 Gbit- uses So Micron is on track to be the first vendor to offer 24GB HBM3 modules in the more popular 8-Hi configuration. And Micron doesn't plan to stop at 8-Hi 24Gbit HBM3 Gen2 modules, and the company says they plan Country Email List introduce 36GB 12-Hi HBM3 Gen2 stacks next year. Besides taking the lead in density, Micron also wants to lead in speed. The company expects the HBM3 Gen2 parts to reach speeds of up to 9.2 GT/s, 44% above the top speed of the HBM3 core specification and 15% faster than the 8 GT/s target for rival SK hynix HBM3E Memory .
The increased data transfer rateallows each 24 GB memory module to offer a peak bandwidth of 1.2 TB/s per stack. Micron says the 24GB HBM3 Gen2 stacks enable 4096-bit HBM3 memory subsystems with 4.8 TB/s bandwidth and 6096-bit HBM3 memory subsystems with 7.2 TB/s bandwidth. To put the numbers into context, the Nvidia H100 SXM has a peak memory bandwidth of 3.35 TB/s. Micron's goal of moving to an immediate leadership position in the HBM3 market means that they need to step up their competition from a technical level. Among other changes and innovations to make it happen, the company has doubled the number of silicon wafers (TSV) compared to the HBM3 product delivery. In addition, Micron has reduced the distance between DRAM devices in HBM3 Gen2 stacks. These two changes in packaging reduced the thermal resistance of these memory modules and made them easier to cool. However, the increased number of TSVs may also bring other advantages.